AAT series

  • NVE
  • Tunnelling Magnetoresistance (TMR) technology
  • Supply voltage +5.5V
  • Miniature TDFN6 package
  • Microwatt power consumption
  • High output signal without amplification
  • Sine and cosine and outputs
  • Immune to airgap variations
  • NVE
  • Tunnelling Magnetoresistance (TMR) technology
  • Supply voltage +5.5V
  • Miniature TDFN6 package
  • Low power consumption
  • High output signal without amplification
  • Sine and cosine and outputs
  • Direct microcontroller interfacing.
  • Temperature range โˆ’40ยฐC to +125ยฐC
  • NVE
  • Tunnelling Magnetoresistance (TMR) technology
  • Supply voltage +5.5V
  • Miniature TDFN6 package
  • Low power consumption
  • High output signal without amplification
  • Sine and cosine and outputs
  • Immune to airgap variations
  • NVE
  • Tunnelling Magnetoresistance (TMR) technology
  • Supply voltage +5.5V
  • Miniature TDFN6 package
  • Microwatt power consumption
  • High output signal without amplification
  • Sine and cosine and outputs
  • Immune to airgap variations
  • NVE
  • Tunnelling Magnetoresistance (TMR) technology
  • Supply voltage +5.5V
  • Miniature TDFN6 package
  • Microwatt power consumption
  • High output signal without amplification
  • Sine and cosine and outputs
  • Full-bridge (differential) configuration