Cissoid CMT-PLA3SB12340A

Product Features

  • Silicon Carbide (SiC) MOSFET Intelligent Power Module
  • 3-phase inverter with anti-parallel diodes
  • Drain-to-source Breakdown Voltage of 1200V
  • Max Continuous Current of 340A/260A at Tc=25°C/90°C
  • Low On Resistance of 3.25 mΩ typical
  • Junction Temperature: -40°C to +175°C
  • Compliant

The CMT-PLA3SB12340AA is a Silicon Carbide (SiC) Power Module from Cissoid, engineered for highly efficient power conversion in demanding applications.

It is a 3-phase, 1200V/340A SiC MOSFET intelligent power module that integrates power switches and a gate driver based on the CISSOID HADES2 chipset. The module is cooled using a lightweight AlSiC flat baseplate, making it ideal for high-power-density converters. It is designed to operate at junction temperatures of up to 175°C, ensuring reliable performance in harsh environments.

This solution provides significant advantages over traditional IGBT modules by fully utilising SiC technology, offering:

High Efficiency: The low switching losses of SiC reduce heat generation, enhancing overall power efficiency.
High Power Density: The compact design allows for a smaller footprint, optimising system architecture.
High Reliability: Operation at elevated temperatures improves durability, particularly for industrial and automotive applications.

The integration of the gate driver with the power module delivers a fully validated and optimised solution. It ensures faster switching speeds, minimises losses, and provides robustness against dI/dt and dV/dt. Additionally, the module includes built-in protection features such as:

  • Desaturation protection (Desat)
  • Soft Shutdown (SSD)
  • Negative gate drive (-3V)
  • Active Miller Clamping (AMC)
  • Gate-Source Short-circuit Protection
  • Open-drain fault reporting (per side or per phase)
  • Turn-On/Off delay: 180ns (typical)
  • Under-voltage lockout (UVLO) on VCC and internally generated secondary supplies

These features make the CMT-PLA3SB12340AA ideal for high-power applications requiring robust, efficient, and reliable power management solutions.

Typical Applications for the CMT-PLA3SB12340AA include:

Automotive Industry: Electric and hybrid vehicle powertrains, High-power battery chargers
Renewable Energy: Solar inverters, Wind turbine power systems, Energy storage systems
Industrial Sector: Industrial motor drives, High-efficiency switch mode power supplies (SMPS), Uninterruptible power supplies (UPS)
Aerospace and Defence: Power systems for avionics and defence equipment, High-temperature power conversion for extreme environments
Rail and Marine Transportation: Traction inverters for rail systems, Marine propulsion systems
Oil & Gas Exploration: High-temperature power conversion for drilling and exploration equipment

These applications span across industries that demand high efficiency, reliability, and thermal robustness in power conversion systems.

Cissoid is a leading provider of high-temperature and high-reliability semiconductor solutions, specialising in power management for industrial, automotive, and aerospace applications. They focus on delivering efficient, robust, and durable silicon carbide (SiC) and silicon-based products. For more information, visit their website https://www.cissoid.com/.

Specifications

Weight .550 kg
Dimensions 34 x 104 x 154mm
Product Type

VDS Breakdown Voltage

1200V

Low Rdson

3.25mΩ (typical), 4mΩ (max)

Maximum Continuous Current

340A typ. @ Tc=25°C, 295A typ. @ Tc=90°C

Thermal resistance

0.183 °C/W (typical)

Junction Operating Temperature

175°C (max)

Switching Energy

Eon: 8.42 mJ (@600V/300A), Eoff: 7.05 mJ (@600V/300A)

Switching Frequency

50kHz (max) *

Isolation Voltage

3000VDC (1 min, primary – secondary), 5000VDC (1 min, baseplate – power pins)

Common mode transient immunity

>50kV/µs

Supply Voltage

12 to 18V (VCC)

Temperature Range (°C)

-40 to +150°C

Parasitic Capacitance

11pF per phase (typical)

* With Gate driver temperature derating from 25KHz to 50KHz (see curve at page 17 of the datasheet)

Resources

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