English

+44 (0) 1342 330 470

Basket

SiC Intelligent Power Modules series

  • Cissoid

Cissoid CMT-PLA3SB12340A

  • Silicon Carbide (SiC) MOSFET Intelligent Power Module
  • 3-phase inverter with anti-parallel diodes
  • Drain-to-source Breakdown Voltage of 1200V
  • Max Continuous Current of 340A/260A at Tc=25ยฐC/90ยฐC
  • Low On Resistance of 3.25 mฮฉ typical
  • Junction Temperature: -40ยฐC to +175ยฐC
View Product
Add to Compare
Datasheet
  • Compliant

Cissoid CMT-PLA3SB12340A

  • Silicon Carbide (SiC) MOSFET Intelligent Power Module
  • 3-phase inverter with anti-parallel diodes
  • Drain-to-source Breakdown Voltage of 1200V
  • Max Continuous Current of 340A/260A at Tc=25ยฐC/90ยฐC
  • Low On Resistance of 3.25 mฮฉ typical
  • Junction Temperature: -40ยฐC to +175ยฐC
View Product