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EnglishPicoAmp Diode series
Supporting Manufacturer Information
- InterFET Application Note 014: Introduction to JFETs
- InterFET Application Note 015: JFET Fundamentals
- InterFET Application Note 016: JFET Implementations
- InterFET Application Note 017: Common Parameters & Equations
- InterFET Application Note 105: Improved Process for Manufacture of Radiation Hard N-Channel JFETs for Detector Electronics
- InterFET Application Note 107: Biasing JFETs to Achieve Zero Drift
- InterFET CTC-020 Soldering Profile
- InterFET CTC-021 Tape & Reel
- InterFET CTC-022 RoHS Compliance
- InterFET CTC-024 REACH Compliance
The InterFET PAD is constructed from the N0001H geometry and is likened to a JFET with the drain and source shorted together. In this configuration it provides an ultra low leakage diode. This diode connected JFET can obtain leakage current levels below 200 femto-amps (fA) at a Vdg of 20V, or less than 100 fA at a Vdg of 5V which is almost immeasurable.
InterFET offers both single and dual PAD versions in various package configurations. For the SOT-23 package, it is up to the user to short the source and drain pins.
InterFET PAD1 N-Channel PicoAmp Diode with N0001H Geometry. Typical leakage of -0.5pA. All of this in a TO-18 package.
InterFET SMPPAD1 N-Channel PicoAmp Diode with N0001H Geometry. Typical leakage of -0.5pA. All of this in a SOT-23 package.
