TMR Magnetic Sensors

  • Coto Technology
  • TMR digital open-drain magnetic sensor
  • Operate sensitivity of -15 G (typical)
  • Average supply current of 110nA at 3V (typical)
  • Supply voltage range of 1.7V to 5.5V
  • Unipolar open-drain response
  • Operating frequency of 20Hz
  • SOT-23-3 (551) package
  • Compliant
  • Coto Technology
  • TMR digital open-drain magnetic sensor
  • Operate sensitivity of 30 G (typical)
  • Average supply current of 70nA at 3V (typical)
  • Supply voltage range of 1.7V to 5.5V
  • Omnipolar push-pull response
  • Operating frequency of 2Hz
  • SOT-23-3 (511) or LGA-4 (512) package
  • Compliant
  • NVE
  • Tunnelling Magnetoresistance (TMR) technology
  • Supply voltage +5.5V
  • Miniature TDFN6 package
  • Microwatt power consumption
  • High output signal without amplification
  • Sine and cosine and outputs
  • Immune to airgap variations
  • Compliant
  • NVE
  • Tunnelling Magnetoresistance (TMR) technology
  • Supply voltage +5.5V
  • Miniature TDFN6 package
  • Low power consumption
  • High output signal without amplification
  • Sine and cosine and outputs
  • Direct microcontroller interfacing.
  • Temperature range −40°C to +125°C
  • Compliant
  • NVE
  • Tunnelling Magnetoresistance (TMR) technology
  • Supply voltage +5.5V
  • Miniature TDFN6 package
  • Low power consumption
  • High output signal without amplification
  • Sine and cosine and outputs
  • Immune to airgap variations
  • Compliant
  • NVE
  • Tunnelling Magnetoresistance (TMR) technology
  • Supply voltage +5.5V
  • Miniature TDFN6 package
  • Microwatt power consumption
  • High output signal without amplification
  • Sine and cosine and outputs
  • Immune to airgap variations
  • Compliant
  • NVE
  • Tunnelling Magnetoresistance (TMR) technology
  • Supply voltage +5.5V
  • Miniature TDFN6 package
  • Microwatt power consumption
  • High output signal without amplification
  • Sine and cosine and outputs
  • Full-bridge (differential) configuration
  • Compliant
  • NVE
  • TMR isolated current sensor
  • Low current detection & measurement
  • On-chip current strap for precise operation
  • Linear range of −500mA to +500mA
  • Sensitivity of 0.04 V/V-mA
  • Ultraminiature DFN6 Package
  • Compliant
  • NVE
  • Rotation sensors using Tunnelling Magnetoresistance (TMR) technology
  • Extremely low power (1.8μA typ. at 2.4V)
  • Precision digital quadrant outputs
  • Wide airgap tolerance
  • Integrated fault detection
  • Ultraminiature TDFN6 packages
  • Compliant
  • NVE
  • Rotation sensors using Tunnelling Magnetoresistance (TMR) technology
  • Extremely low power of 1.8μA (typ.) at 2.4V
  • Precision digital quadrant outputs
  • Wide airgap tolerance
  • Integrated fault detection
  • Ultraminiature TDFN6 packages
  • Compliant
  • NVE
  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output is activated if magnetic field of either polarity is applied
  • Continuous operation for low noise and high-speed
  • Ultrasensitive operate point, as low as 4.5mT
  • Compliant
  • NVE
  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output is activated if magnetic field of either polarity is applied
  • Continuous operation for low noise and high-speed
  • Ultrasensitive operate point, as low as 4.5mT
  • Compliant
  • NVE
  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output is activated if magnetic field of either polarity is applied
  • Continuous operation for low noise and high-speed
  • Ultrasensitive operate point, as low as 3.2mT
  • Compliant
  • NVE
  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output is activated if magnetic field of either polarity is applied
  • Continuous operation for low noise and high-speed
  • Ultrasensitive operate point, as low as 3.2mT
  • Compliant
  • NVE
  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output is activated if magnetic field of either polarity is applied
  • Continuous operation for low noise and high-speed
  • Ultrasensitive operate point, as low as 2.2mT
  • Compliant
  • NVE
  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output is activated if magnetic field of either polarity is applied
  • Continuous operation for low noise and high-speed
  • Ultrasensitive operate point, as low as 2.2mT
  • Compliant

Manufacturers

Looking for TMR Magnetic Sensors?

Looking for TMR Magnetic Sensors?

The below manufacturers are all of our authorised partners that produce TMR Magnetic Sensors or related products.

TMR Magnetic Sensors

TMR or Tunneling Magnetoresistance utilises a magnetic tunnelling junction element, comprising of a ferromagnetic free and pinned layers, separated by a dielectric spacer layer. The magnetism direction of both ferromagnetic layers can be switched; when parallel, electrons can make a quantum leap to tunnel through the spacer layer. At Rhopoint Components, we are proud to offer a full range of TMR sensors including analog and digital sensors, proximity, angle and rotation sensors and smart sensors for Arduino applications.
It is common to compare the TME devices to the traditional Hall effect sensors, as they are both compatible with the modern CMOS technology – the TMR, however, offers smaller package size (the RedRockTM series are some of the smallest magnetic sensors on the market), lower power consumption, 1000-times higher sensitivity and high thermal stability. If you are considering replacing your Hall effect sensors with the TMR sensors, please do not hesitate to contact us, our sales engineers are trained to provide support and help you find the best solution.