SiC Intelligent Power Modules

Cissoid CMT-PLA1BL12300MA IGBT Power Module

Cissoid IGBT Power Module 1200V / 300A
  • Max Collector Voltage: 1200V
  • DC Collector Current (@ TC=90°C: 450A) (@ TC=125°C: > 300A)
  • Low Switching Energy: (Eon= 34mJ at Tj=150°C) (Eoff= 34.5mJ Tj=150°C)
  • Gate charge: QG=2.3μC
  • Operating range -40 to +175°C (Tj)
  • Package : CPAK-EDC

Cissoid CMT-PLA3SB12340A

Silicon Carbide (SiC) MOSFET Intelligent Power Module
  • Silicon Carbide (SiC) MOSFET Intelligent Power Module
  • 3-phase inverter with anti-parallel diodes
  • Drain-to-source Breakdown Voltage of 1200V
  • Max Continuous Current of 340A/260A at Tc=25°C/90°C
  • Low On Resistance of 3.25 mΩ typical
  • Junction Temperature: -40°C to +175°C

Custom Component Solutions

Working alongside your design team from the earliest stage, we help you select the right part for the application and, where a standard part will not do, develop customised components with our manufacturing partners such as lead length, termination and package size.

Related Components

Manufacturers

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The below manufacturers are all of our authorised partners that produce SiC Intelligent Power Modules or related products.

SiC Intelligent Power Modules

Silicon carbide power modules with gate drive, protection and sensing built in alongside the switches. The wide bandgap device allows a higher switching frequency and a smaller magnetics and cooling budget in inverter and motor control stages.