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EnglishSiC Intelligent Power Modules
- Silicon Carbide (SiC) MOSFET Intelligent Power Module
- 3-phase inverter with anti-parallel diodes
- Drain-to-source Breakdown Voltage of 1200V
- Max Continuous Current of 340A/260A at Tc=25°C/90°C
- Low On Resistance of 3.25 mΩ typical
- Junction Temperature: -40°C to +175°C
Manufacturers
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