Active Input Digital Isolators

  • NVE

NVE IL716-3E

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.15″ SOIC package
  • NVE

NVE IL716E

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package
  • NVE

NVE IL716T-3E

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.15″ SOIC package
  • NVE

NVE IL716TE

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package
  • NVE

NVE IL716VE

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 6kVRMS isolation voltage
  • 1kVRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package
  • NVE

NVE IL717-3E

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.15″ SOIC package
  • NVE

NVE IL717E

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package
  • NVE

NVE IL717T-3E

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.15″ SOIC package
  • NVE

NVE IL717TE

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package
  • NVE

NVE IL717VE

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 6kVRMS isolation voltage
  • 1kVRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package
  • NVE

NVE IL721-3E

  • High speed digital isolators
  • Multidirectional two channel isolation (reverse pinout)
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 8-pin 0.15″ SOIC package
  • NVE

NVE IL721E

  • High speed digital isolators
  • Multidirectional two channel isolation (reverse pinout)
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600VRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 8-pin 0.15″ SOIC package
  • NVE

NVE IL721T-3E

  • High temperature, high speed digital isolators
  • Multidirectional two channel isolation (reverse pinout)
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 0.3ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 8-pin 0.15″ SOIC package
  • NVE

NVE IL721TE

  • High temperature, high speed digital isolators
  • Multidirectional two channel isolation (reverse pinout)
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 0.3ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package
  • NVE

NVE IL721VE

  • High speed digital isolators
  • Multidirectional two channel isolation (reverse pinout)
  • High speed at 110 Mbps typical
  • 6 kVRMS isolation voltage
  • 1 kVRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 8-pin 0.15″ SOIC package
  • NVE

NVE IL810T-1E

  • High speed, High-Temperature, DC-correct digital isolators
  • Single channel isolation
  • High speed at 110 Mbps typical
  • 1kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • Internal refresher clock to ensure response to DC states of input within 9ฮผs maximum
  • 0.0013 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 3ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 8-pin MSOP package

NVE IL716-3E

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.15″ SOIC package

NVE IL716E

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package

NVE IL716T-3E

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.15″ SOIC package

NVE IL716TE

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package

NVE IL716VE

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 6kVRMS isolation voltage
  • 1kVRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package

NVE IL717-3E

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.15″ SOIC package

NVE IL717E

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package

NVE IL717T-3E

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.15″ SOIC package

NVE IL717TE

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package

NVE IL717VE

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 6kVRMS isolation voltage
  • 1kVRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package

NVE IL721-3E

  • High speed digital isolators
  • Multidirectional two channel isolation (reverse pinout)
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 8-pin 0.15″ SOIC package

NVE IL721E

  • High speed digital isolators
  • Multidirectional two channel isolation (reverse pinout)
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600VRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 8-pin 0.15″ SOIC package

NVE IL721T-3E

  • High temperature, high speed digital isolators
  • Multidirectional two channel isolation (reverse pinout)
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 0.3ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 8-pin 0.15″ SOIC package

NVE IL721TE

  • High temperature, high speed digital isolators
  • Multidirectional two channel isolation (reverse pinout)
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 0.3ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package

NVE IL721VE

  • High speed digital isolators
  • Multidirectional two channel isolation (reverse pinout)
  • High speed at 110 Mbps typical
  • 6 kVRMS isolation voltage
  • 1 kVRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 8-pin 0.15″ SOIC package

NVE IL810T-1E

  • High speed, High-Temperature, DC-correct digital isolators
  • Single channel isolation
  • High speed at 110 Mbps typical
  • 1kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • Internal refresher clock to ensure response to DC states of input within 9ฮผs maximum
  • 0.0013 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 3ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 8-pin MSOP package

Manufacturers

Looking for Active Input Digital Isolators?

The below manufacturers are all of our authorised partners that produce Active Input Digital Isolators or related products.

Active Input Digital Isolators

IsoLoop digital isolators by NVE Corporation with active input utilise NVE’s patented spintronic GMR technology to offer galvanically-isolated interface with excellent properties. They are available in range of packages, from ultraminiature MSOP to standard SOIC packages.