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English200 Oe series
- Tunnelling Magnetoresistance (TMR) technology
- Supply voltage +5.5V
- Miniature TDFN6 package
- Microwatt power consumption
- High output signal without amplification
- Sine and cosine and outputs
- Immune to airgap variations
- Tunnelling Magnetoresistance (TMR) technology
- Supply voltage +5.5V
- Miniature TDFN6 package
- Low power consumption
- High output signal without amplification
- Sine and cosine and outputs
- Direct microcontroller interfacing.
- Temperature range −40°C to +125°C
- Tunnelling Magnetoresistance (TMR) technology
- Supply voltage +5.5V
- Miniature TDFN6 package
- Microwatt power consumption
- High output signal without amplification
- Sine and cosine and outputs
- Immune to airgap variations
- Tunnelling Magnetoresistance (TMR) technology
- Supply voltage +5.5V
- Miniature TDFN6 package
- Microwatt power consumption
- High output signal without amplification
- Sine and cosine and outputs
- Full-bridge (differential) configuration
- Rotation sensors using Tunnelling Magnetoresistance (TMR) technology
- Extremely low power (1.8μA typ. at 2.4V)
- Precision digital quadrant outputs
- Wide airgap tolerance
- Integrated fault detection
- Ultraminiature TDFN6 packages
- Rotation sensors using Tunnelling Magnetoresistance (TMR) technology
- Extremely low power of 1.8μA (typ.) at 2.4V
- Precision digital quadrant outputs
- Wide airgap tolerance
- Integrated fault detection
- Ultraminiature TDFN6 packages
