Motion Control

Isabellenhรผtte’s innovative solution for battery management system applications – the IsaSCALE IVT-S is a plug-and-play module for precise current and voltage measurement in package fitting into palm of your hand.

Magnetic sensors, digital isolators and low power switch sensors based on spintronic GMR (Giant Magnetoresistance) technology from NVE Corporation, including high temperature models.

Metal clad thick film and wirewould resistors from RARA, including inductive and non-inductive designs, braking resistors.

Range of short- and long sided thin film terminals from Susumu, including models with high power handling capacity, models suppressing the surface temperature and others.

  • NVE

NVE IL261-1E

  • High Speed digital isolators
  • Five channel, multidirectional isolation
  • 2.5kVRMS isolation voltage
  • 600VRMS woking voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • Quiescent current of 0.0012A per channel minimum
  • 2ns typical pulse width distortion
  • 100ps pulse jitter
  • 4ns typical propagation delay skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • QSOP package
  • NVE

NVE IL261-3E

  • High Speed digital isolators
  • Five channel, multidirectional isolation
  • 2.5kVRMS isolation voltage
  • 600VRMS woking voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • Quiescent current of 0.0012A per channel minimum
  • 2ns typical pulse width distortion
  • 100ps pulse jitter
  • 4ns typical propagation delay skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 1.5″ 16-pin SOIC package
  • NVE

NVE IL261E

  • High Speed digital isolators
  • Five channel, multidirectional isolation
  • 2.5kVRMS isolation voltage
  • 600VRMS woking voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • Quiescent current of 0.0012A per channel minimum
  • 2ns typical pulse width distortion
  • 100ps pulse jitter
  • 4ns typical propagation delay skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package
  • NVE

NVE IL261VE

  • High Speed digital isolators
  • Five channel, multidirectional isolation
  • 6kVRMS isolation voltage
  • 1kVRMS woking voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • Quiescent current of 0.0012A per channel minimum
  • 2ns typical pulse width distortion
  • 100ps pulse jitter
  • 4ns typical propagation delay skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package
  • NVE

NVE IL262-3E

  • High Speed digital isolators
  • Five channel, multidirectional isolation
  • 2.5kVRMS isolation voltage
  • 600VRMS woking voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • Quiescent current of 0.0012A per channel minimum
  • 2ns typical pulse width distortion
  • 100ps pulse jitter
  • 4ns typical propagation delay skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 1.5″ 16-pin SOIC package
  • NVE

NVE IL262VE

  • High Speed digital isolators
  • Five channel, multidirectional isolation
  • 6kVRMS isolation voltage
  • 1kVRMS woking voltage per VDE V 0884-10
  • 50 kV/ฮผs typical (30 kV/ฮผs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • Quiescent current of 0.0012A per channel minimum
  • 2ns typical pulse width distortion
  • 100ps pulse jitter
  • 4ns typical propagation delay skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package
  • NVE

NVE IL510-1E

  • Surface-mount DC-correct single channel digital isolator
  • Common mode transient immunity 30kV/ฮผs min. and 50kV/ฮผs typ.
  • High voltage enduramce of 1000VRMS/1500VDC
  • Barrier life of 44000years
  • Output quiescent supply current 0.0018A (VDD = 5V)
  • Pulse width distortion 10ns
  • Low EMC footprint
  • UL 1577 recognised; IEC 60747-5-5 (VDE 0884) certified
  • 8-pin MSOP package
  • NVE

NVE IL510-3E

  • Surface-mount DC-correct single channel digital isolator
  • Common mode transient immunity 30kV/ฮผs min. and 50kV/ฮผs typ.
  • High voltage enduramce of 1000VRMS/1500VDC
  • Barrier life of 44000years
  • Output quiescent supply current 0.0018A (VDD = 5V)
  • Pulse width distortion 10ns
  • Low EMC footprint
  • UL 1577 recognised; IEC 60747-5-5 (VDE 0884) certified
  • 8-pin SOIC package
  • NVE

NVE IL511-1E

  • Surface-mount DC-correct dual channel digital isolator
  • Common mode transient immunity 30kV/ฮผs min. and 50kV/ฮผs typ.
  • High voltage enduramce of 1000VRMS/1500VDC
  • Barrier life of 44000years
  • Output quiescent supply current 0.0036A (VDD = 5V)
  • Pulse width distortion 10ns
  • Low EMC footprint
  • UL 1577 recognised; IEC 60747-5-5 (VDE 0884) certified
  • 8-pin MSOP package
  • NVE

NVE IL511-3E

  • Surface-mount DC-correct dual channel digital isolator
  • Common mode transient immunity 30kV/ฮผs min. and 50kV/ฮผs typ.
  • High voltage enduramce of 1000VRMS/1500VDC
  • Barrier life of 44000years
  • Output quiescent supply current 0.0036A (VDD = 5V)
  • Pulse width distortion 10ns
  • Low EMC footprint
  • UL 1577 recognised; IEC 60747-5-5 (VDE 0884) certified
  • 8-pin SOIC package
  • NVE

NVE IL514-3E

  • Surface-mount DC-correct digital isolator
  • Multi isolation (2 transmit and 1 receive)
  • Common mode transient immunity 30kV/ฮผs min. and 50kV/ฮผs typ.
  • High voltage enduramce of 1000VRMS/1500VDC
  • Barrier life of 44000years
  • Output quiescent supply current 0.0036A (VDD = 5V)
  • Pulse width distortion 10ns
  • Low EMC footprint
  • UL 1577 recognised; IEC 60747-5-5 (VDE 0884) certified
  • 16-pin 0.15″ wide SOIC package
  • NVE

NVE IL514E

  • Surface-mount DC-correct dual channel digital isolator
  • Mulit channel isolation (2 transmit and 1 receive)
  • Common mode transient immunity 30kV/ฮผs min. and 50kV/ฮผs typ.
  • High voltage enduramce of 1000VRMS/1500VDC
  • Barrier life of 44000years
  • Output quiescent supply current 0.0036A (VDD = 5V)
  • Pulse width distortion 10ns
  • Low EMC footprint
  • UL 1577 recognised; IEC 60747-5-5 (VDE 0884) certified
  • 16-pin 0.3 wide SOIC package
  • NVE

NVE IL515E

  • Surface-mount DC-correct dual channel digital isolator
  • Four channel isolation (unidirectional)
  • Common mode transient immunity 30kV/ฮผs min. and 50kV/ฮผs typ.
  • High voltage enduramce of 1000VRMS/1500VDC
  • Barrier life of 44000years
  • Output quiescent supply current 0.0072A (VDD = 5V)
  • Pulse width distortion 10ns
  • Low EMC footprint
  • UL 1577 recognised; IEC 60747-5-5 (VDE 0884) certified
  • 16-pin 0.3 wide SOIC package
  • NVE

NVE IL516-3E

  • Surface-mount DC-correct dual channel digital isolator
  • Four channel isolation (2 transmit and 2 receive)
  • Common mode transient immunity 30kV/ฮผs min. and 50kV/ฮผs typ.
  • High voltage enduramce of 1000VRMS/1500VDC
  • Barrier life of 44000years
  • Output quiescent supply current 0.0036A (VDD = 5V)
  • Pulse width distortion 10ns
  • Low EMC footprint
  • UL 1577 recognised; IEC 60747-5-5 (VDE 0884) certified
  • 16-pin 0.15 wide SOIC package
  • NVE

NVE IL516E

  • Surface-mount DC-correct dual channel digital isolator
  • Four channel isolation (2 transmit and 2 receive)
  • Common mode transient immunity 30kV/ฮผs min. and 50kV/ฮผs typ.
  • High voltage enduramce of 1000VRMS/1500VDC
  • Barrier life of 44000years
  • Output quiescent supply current 0.0036A (VDD = 5V)
  • Pulse width distortion 10ns
  • Low EMC footprint
  • UL 1577 recognised; IEC 60747-5-5 (VDE 0884) certified
  • 16-pin 0.3 wide SOIC package
  • NVE

NVE IL521-3E

  • Surface-mount DC-correct dual channel digital isolator
  • Common mode transient immunity 30kV/ฮผs min. and 50kV/ฮผs typ.
  • High voltage enduramce of 1000VRMS/1500VDC
  • Barrier life of 44000years
  • Output quiescent supply current 0.0036A (VDD = 5V)
  • Pulse width distortion 10ns
  • Low EMC footprint
  • UL 1577 recognised; IEC 60747-5-5 (VDE 0884) certified
  • 8-pin SOIC package